A scheme for spin transistor with extremely large on/off current ratio

4 A spin field effect transistor for low leakage current

In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the " off "-state, resulting in significant standby power dissipation....

A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio

We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with a few mV change in the differential bias between the two pads, resulting in extremely low dynamic power dissipation during switching. The ratio of ON to OFF...

Quantum spin transistor with a Heisenberg spin chain

Spin chains are paradigmatic systems for the studies of quantum phases and phase transitions, and for quantum information applications, including quantum computation and short-distance quantum communication. Here we propose and analyse a scheme for conditional state transfer in a Heisenberg XXZ spin chain which realizes a quantum spin transistor. In our scheme, the absence or presence of a cont...

Current-Controlled Magnetization Dynamics in the Spin-Flip Transistor

9 S ep 2 00 4 A spin field effect transistor for low leakage current

In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the " off "-state, resulting in significant standby power dissipation....